Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm2V−1s−1. The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detailed studies showed that the room-temperature ZrInO thin film was in the amorphous state with low carrier density because of the strong bonding strength of Zr-O. The room-temperature process is attractive for its compatibility with almost all kinds of the flexible substrates, and the DC sputtering process is good for the production efficiency improvement and the fabrication cost reduction.
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机译：通过全直流溅射在室温下成功地制造了具有掺锆的氧化铟（ZrInO）半导体的薄膜晶体管（TFT）。 ZrInO TFT没有经过任何有意的退火步骤，其饱和迁移率高达25.1 cm 2 V -1 s -1 。对于ZrInO TFT，在正向栅极偏置应力作用下1个小时，其阈值电压漂移仅为0.35 µV。详细的研究表明，由于Zr-O的强结合强度，室温ZrInO薄膜处于非晶态且载流子密度低。室温工艺因其与几乎所有种类的柔性基板的相容性而吸引人，并且直流溅射工艺有利于提高生产效率和降低制造成本。
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