Realisation of topological zero-energy mode in bilayer graphene in zero magnetic field

摘要

Bilayer graphene (BLG) gapped by a vertical electric field represents a valley-symmetry-protected topological insulating state. Emergence of a new topological zero-energy mode has been proposed in BLG at a boundary between regions of inverted band gaps induced by two oppositely polarized vertical electric fields. However, its realisation has been challenged by the enormous difficulty in arranging two pairs of accurately aligned split gates on the top and bottom surfaces of clean BLG. Here we report realisation of the topological zero-energy mode in ballistic BLG, with zero-bias differential conductance close to the ideal value of 4 e ²/h (e is the electron charge and h is Planck’s constant) along a boundary channel between a pair of gate-defined inverted band gaps. This constitutes the bona fide electrical-gate-tuned generation of a valley-symmetry-protected topological boundary conducting channel in BLG in zero magnetic field, which is essential to valleytronics applications of BLG.