In present-day high-performance electronic components, the generated heat loads result in unacceptably high junction temperatures and reduced component lifetimes. Thermoelectric modules can, in principle, enhance heat removal and reduce the temperatures of such electronic devices. However, state-of-the-art bulk thermoelectric modules have a maximum cooling flux qmax of only about 10 W cm−2, while state-of-the art commercial thin-film modules have a qmax <100 W cm−2. Such flux values are insufficient for thermal management of modern high-power devices. Here we show that cooling fluxes of 258 W cm−2 can be achieved in thin-film Bi2Te3-based superlattice thermoelectric modules. These devices utilize a p-type Sb2Te3/Bi2Te3 superlattice and n-type δ-doped Bi2Te3−xSex, both of which are grown heteroepitaxially using metalorganic chemical vapour deposition. We anticipate that the demonstration of these high-cooling-flux modules will have far-reaching impacts in diverse applications, such as advanced computer processors, radio-frequency power devices, quantum cascade lasers and DNA micro-arrays.
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机译：在当今的高性能电子组件中，产生的热负荷导致结温高到令人无法接受的水平，并缩短了组件的使用寿命。热电模块原则上可以增强散热并降低此类电子设备的温度。然而，现有技术的大块热电模块的最大冷却通量qmax仅为约10 W cm -2 ，而现有技术的商业薄膜模块的最大冷却通量qmax < 100 W cm −2 。这样的通量值不足以用于现代大功率设备的热管理。在这里我们表明，在基于Bi2Te3的薄膜超晶格热电模块中可以实现258 W cm −2 的冷却通量。这些器件利用了p型Sb2Te3 / Bi2Te3超晶格和n型δ掺杂的Bi2Te3-xSex，它们都是通过金属有机化学气相沉积异质外延生长的。我们预计，这些高冷却通量模块的演示将在各种应用中产生深远的影响，例如高级计算机处理器，射频功率设备，量子级联激光器和DNA微阵列。
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