Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III–V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46 magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p–n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2 V−1 s−1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.
展开▼
机译：磁性半导体由于其对新功能和器件概念的承诺而引起了人们的极大兴趣，这是对未来的自旋电子/电子应用的新兴要求。到目前为止，所谓的稀释磁性半导体吸引了很多关注，但是将居里温度提高到室温以上仍然是一项挑战，特别是那些基于III–V半导体的半导体。与将磁性元素掺杂到常规半导体中以制成稀释的磁性半导体的概念相反，在这里我们建议氧化最初的铁磁性金属/合金以形成新型的磁性半导体。我们将氧气引入铁磁性金属玻璃中，以形成居里温度高于600 K的Co28.6Fe12.4Ta4.3B8.7O46磁性半导体。这种材料中p–n异质结的演示和室温铁磁性的电场控制反映了它的p型半导体特性，其迁移率为0.1 cm 2 V -1 s -1 。我们的发现可能为实现具有不同寻常多功能性的高居里温度磁性半导体铺平了新途径。
展开▼
