Different symmetry breaking ways determine various magnetization switching modes driven by spin–orbit torques (SOT). For instance, an applied or effective field parallel to applied current is indispensable to switch magnetization with perpendicular anisotropy by SOT. Besides of this mode, here we experimentally demonstrate a distinct field-free switching mode in a T-type magnetic system with structure of MgO/CoFeB/Ta/CoFeB/MgO where a perpendicular layer with tilted easy axis was coupled to an in-plane layer with a uniaxial easy axis. Current was applied orthogonal to both easy axes and thus also normal to an in-plane effective field experienced by the perpendicular layer. Dynamic calculation shows perpendicular layer could be switched at the same time as the in-plane layer is switched. These field-free switching modes realized in the same T-type magnetic system might expedite the birth of multi-state spin memories or spin logic devices which could be operated by all electric manners.
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机译:不同的对称破坏方式决定了由自旋轨道转矩(SOT)驱动的各种磁化切换模式。例如,必不可少的是平行于施加电流的施加磁场或有效磁场,以通过SOT转换具有垂直各向异性的磁化强度。除了这种模式外,我们在实验上还演示了在MgO / CoFeB / Ta / CoFeB / MgO结构的T型磁系统中的独特的无场切换模式,其中具有倾斜易轴的垂直层耦合到面内单轴易轴层。垂直于两个易轴施加电流,因此垂直于垂直层所经历的平面内有效场。动态计算表明,可以在切换面内层的同时切换垂直层。在相同的T型磁系统中实现的这些无场切换模式可能会加速多态自旋存储器或自旋逻辑设备的诞生,它们可以通过所有电子方式进行操作。
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