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Both mutated and unmutated memory B cells accumulate mutations in the course of the secondary response and develop a new antibody repertoire optimally adapted to the secondary stimulus

机译:突变的和未突变的记忆B细胞在次级反应过程中都会积累突变并开发出最适合次级刺激的新抗体库

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摘要

High-affinity memory B cells are preferentially selected during secondary responses and rapidly differentiate into antibody-producing cells. However, it remains unknown whether only high-affinity, mutated memory B cells simply expand to dominate the secondary response or if in fact memory B cells with a diverse VH repertoire, including those with no mutations, accumulate somatic mutations to create a new repertoire through the process of affinity maturation. In this report, we took a new approach to address this question by analyzing the VH gene repertoire of IgG1+ memory B cells before and after antigen re-exposure in a host unable to generate IgG+ B cells. We show here that both mutated and unmutated IgG1+ memory B cells respond to secondary challenge and expand while accumulating somatic mutations in their VH genes in a stepwise manner. Both types of memory cells subsequently established a VH gene repertoire dominated by two major clonotypes, which are distinct from the original repertoire before antigen re-exposure. In addition, heavily mutated memory B cells were excluded from the secondary repertoire. Thus, both mutated and unmutated IgG1+ memory cells equally contribute to establish a new antibody repertoire through a dynamic process of mutation and selection, becoming optimally adapted to the recall challenge.
机译:高亲和力记忆B细胞在次级反应期间优先选择,并迅速分化为产生抗体的细胞。然而,尚不清楚仅高亲和力,突变的记忆B细胞会简单地扩展以支配次级反应,还是实际上具有不同VH组成成分的记忆B细胞(包括没有突变的那些)积累体细胞突变以通过创建新的组成成分亲和力成熟的过程。在本报告中,我们采用了一种新方法来解决这个问题,方法是在无法再产生IgG +的宿主中进行抗原再暴露之前和之后,分析IgG1 + 记忆B细胞的VH基因组成 B细胞。我们在这里显示,突变和未突变的IgG1 + 记忆B细胞均对次要挑战作出反应,并在逐步积累其VH基因的体细胞突变的同时扩展。两种类型的记忆细胞随后建立了以两种主要克隆型为主的VH基因库,这与抗原再暴露前的原始库不同。另外,从次要库中排除了严重突变的记忆B细胞。因此,突变的和未突变的IgG1 + 记忆细胞均通过动态的突变和选择过程同样有助于建立新的抗体库,从而最佳地适应召回挑战。

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