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High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

机译:基于等离激元纳米天线阵列的高功率电信兼容光导太赫兹发射器

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摘要

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.
机译:我们提出了一种在电信光波长下工作的高功率和宽带光导太赫兹发射器,在该市场上可以买到紧凑而高性能的光纤激光器。提出的太赫兹发射器利用ErAs:InGaAs基板来实现高电阻率和较短的载流子寿命特性,这是在电信光波长下进行稳健工作所需的。与传统的光电导发射器相比,它还使用等离子纳米天线的二维阵列来提供更高的光-太赫兹转换效率,同时保持宽的工作带宽。我们通过实验证明了在0.1–5 THz频率范围内的脉冲太赫兹辐射,功率水平高达300µW。这是在电信光学波长下工作的光电导发射器报告的最高太赫兹辐射功率。

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