Microwave Backscatter-Based Wireless Temperature Sensor Fabricated by an Alumina-Backed Au Slot Radiation Patch

摘要

A wireless and passive temperature sensor operating up to 800 °C is proposed. The sensor is based on microwave backscatter RFID (radio frequency identification) technology. A thin-film planar structure and simple working principle make the sensor easy to operate under high temperature. In this paper, the proposed high temperature sensor was designed, fabricated, and characterized. Here the 99% alumina ceramic with a dimension of 40 mm × 40 mm × 1 mm was prepared in micromechanics for fabrication of the sensor substrate. The metallization of the Au slot patch was realized in magnetron sputtering with a slot width of 2 mm and a slot length of 32 mm. The measured resonant frequency of the sensor at 25 °C is 2.31 GHz. It was concluded that the resonant frequency decreases with the increase in the temperature in range of 25–800 °C. It was shown that the average sensor sensitivity is 101.94 kHz/°C.