首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >A 12-Bit High-Speed Column-Parallel Two-Step Single-Slope Analog-to-Digital Converter (ADC) for CMOS Image Sensors
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A 12-Bit High-Speed Column-Parallel Two-Step Single-Slope Analog-to-Digital Converter (ADC) for CMOS Image Sensors

机译:用于CMOS图像传感器的12位高速列并行两步单斜率模数转换器(ADC)

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摘要

A 12-bit high-speed column-parallel two-step single-slope (SS) analog-to-digital converter (ADC) for CMOS image sensors is proposed. The proposed ADC employs a single ramp voltage and multiple reference voltages, and the conversion is divided into coarse phase and fine phase to improve the conversion rate. An error calibration scheme is proposed to correct errors caused by offsets among the reference voltages. The digital-to-analog converter (DAC) used for the ramp generator is based on the split-capacitor array with an attenuation capacitor. Analysis of the DAC's linearity performance versus capacitor mismatch and parasitic capacitance is presented. A prototype 1024 × 32 Time Delay Integration (TDI) CMOS image sensor with the proposed ADC architecture has been fabricated in a standard 0.18 μm CMOS process. The proposed ADC has average power consumption of 128 μW and a conventional rate 6 times higher than the conventional SS ADC. A high-quality image, captured at the line rate of 15.5 k lines/s, shows that the proposed ADC is suitable for high-speed CMOS image sensors.
机译:提出了一种用于CMOS图像传感器的12位高速列并行两步单斜率(SS)模数转换器(ADC)。拟议的ADC使用单个斜坡电压和多个参考电压,并将转换分为粗相和细相以提高转换速率。提出了一种误差校准方案,以校正由参考电压之间的偏移引起的误差。用于斜坡发生器的数模转换器(DAC)基于带有衰减电容器的分离电容器阵列。提出了DAC的线性性能与电容器失配和寄生电容的关系分析。具有拟议ADC架构的1024×32时延积分(TDI)CMOS图像传感器原型已通过标准的0.18μmCMOS工艺制造。拟议的ADC具有128μW的平均功耗,并且是传统SS ADC的6倍。以15.5 k line / s的线速捕获的高质量图像表明,所提出的ADC适用于高速CMOS图像传感器。

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