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Hot Plate Annealing at a Low Temperature of a Thin Ferroelectric P(VDF-TrFE) Film with an Improved Crystalline Structure for Sensors and Actuators

机译:铁电P(VDF-TrFE)薄膜的低温热板退火具有改进的晶体结构适用于传感器和执行器

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摘要

Ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) copolymer 70/30 thin films are prepared by spin coating. The crystalline structure of these films is investigated by varying the annealing temperature from the ferroelectric phase to the paraelectric phase. A hot plate was used to produce a direct and an efficient annealing effect on the thin film. The dielectric, ferroelectric and pyroelectric properties of the P(VDF-TrFE) thin films are measured as a function of different annealing temperatures (80 to 140 °C). It was found that an annealing temperature of 100 °C (slightly above the Curie temperature, Tc) has induced a highly crystalline β phase with a rod-like crystal structure, as examined by X-ray. Such a crystal structure yields a high remanent polarization, Pr = 94 mC/m2, and pyroelectric constant, p = 24 μC/m2K. A higher annealing temperature exhibits an elongated needle-like crystal domain, resulting in a decrease in the crystalline structure and the functional electrical properties. This study revealed that highly crystalline P(VDF-TrFE) thin films could be induced at 100 °C by annealing the thin film with a simple and cheap method.
机译:通过旋涂制备铁电性聚偏二氟乙烯-三氟乙烯(P(VDF-TrFE))共聚物70/30薄膜。通过改变退火温度从铁电相到顺电相来研究这些膜的晶体结构。使用热板在薄膜上产生直接和有效的退火效果。测量P(VDF-TrFE)薄膜的介电,铁电和热电性能,作为不同退火温度(80至140°C)的函数。发现通过X射线检查,退火温度为100℃(略高于居里温度Tc)已经诱导了具有棒状晶体结构的高度结晶的β相。这样的晶体结构产生高的剩余极化Pr(94 mC / m 2 )和热电常数p = 24μC/ m 2 K。较高的退火温度表现出伸长的针状晶域,导致晶体结构和功能电性能降低。这项研究表明,通过简单,廉价的方法对薄膜进行退火,可以在100°C诱导出高结晶度的P(VDF-TrFE)薄膜。

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