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18O-tracer diffusion along nanoscaled Sc2O3/yttria stabilized zirconia (YSZ) multilayers: on the influence of strain

机译:沿纳米级Sc2O3 /氧化钇稳定的氧化锆(YSZ)多层膜的18O示踪剂扩散:应变的影响

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摘要

The oxygen tracer diffusion coefficient describing transport along nano-/microscaled YSZ/Sc2O3 multilayers as a function of the thick­ness of the ion-conducting YSZ layers has been measured by isotope exchange depth profiling (IEDP), using secondary ion mass spec­trometry (SIMS). The multilayer samples were prepared by pulsed laser deposition (PLD) on (0001) Al2O3 single crystalline substrates. The values for the oxygen tracer diffusion coefficient were analyzed as a combination of contributions from bulk and interface contributions and compared with results from YSZ/Y2O3-multilayers with similar microstructure. Using the Nernst–Einstein equation as the relation between diffusivity and electrical conductivity we find very good agreement between conductivity and diffusion data, and we exclude substantial electronic conductivity in the multilayers. The effect of hetero-interface transport can be well explained by a simple interface strain model. As the multilayer samples consist of columnar film crystallites with a defined inter­face structure and texture, we also discuss the influence of this particular microstructure on the interfacial strain.
机译:氧示踪剂扩散系数描述了沿着纳米级/微米级YSZ / Sc2O3多层薄膜的迁移与离子导电YSZ层厚度的关系,已通过二次离子质谱法(SIMS)通过同位素交换深度分析(IEDP)进行了测量。通过在(0001)Al2O3单晶衬底上进行脉冲激光沉积(PLD)制备多层样品。氧示踪剂扩散系数的值被分析为体积和界面贡献的组合,并与具有相似微观结构的YSZ / Y2O3多层的结果进行了比较。使用能斯特-爱因斯坦方程作为扩散率和电导率之间的关系,我们发现电导率和扩散数据之间有很好的一致性,并且我们排除了多层中的大量电子电导率。可以通过简单的界面应变模型很好地解释异质界面传输的影响。由于多层样品由具有确定的界面结构和织构的柱状薄膜微晶组成,因此我们还讨论了这种特定的微观结构对界面应变的影响。

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