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Linear magnetoresistance in the low-field limit in density-wave materials

机译:密度波材料在低磁场极限下的线性磁阻

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摘要

The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects, unusual topological band structures, and inhomogeneities that lead to wandering current paths can induce a cross-over from quadratic to linear MR with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear MR. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semiclassical narrative for a broad category of materials with partially gapped Fermi surfaces due to density waves.
机译:材料的磁阻(MR)通常对反转施加的磁场方向不敏感,并且在低磁场极限内随磁场呈二次方变化。量子效应,异常的拓扑能带结构以及导致电流路径漂移的不均匀性会随着磁场的增加而引起从二次MR到线性MR的交叉。在这里,我们探讨了一系列具有极大正线性MR的金属电荷和自旋密度波系统。与其他线性MR机理相比,该效应在低温下仍可保持鲁棒性,以最小化数十奥斯特的磁场。我们用半经典的叙述来解释这种现象的解释,该叙述是由于密度波而使具有部分间隙费米表面的材料的广泛类别。

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