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Polymer M-Z Thermal Optical Switch at 532-nm Based on Wet Etching and UV-Writing Waveguide

机译:基于湿蚀刻和紫外写入波导的532 nm聚合物M-Z热光开关

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摘要

Polymer thermal optical switches have low power consumption and 532 nm is the communication window of polymer fiber. Polymer thermal optical switches at 532 nm are rarely reported, because of switching extinction ratio properties that are restricted by modes of the waveguide. Single mode waveguide at 532 nm is hard to fabricate due to the dissolution of core and cladding materials. A polymer M-Z thermal optical switch at 532 nm was first demonstrated based on the wet etching method. The proposed thermal optical switch was consisted of silica substrate, photosensitive polymer core, and cladding material. The device was fabricated and tested with the power consumption of 6.55mW, extinction of 4.8 dB, and switching time of 0.23 ms (rise)/0.28 ms (down). An optimized switch structure combining with the UV-writing technique and graphene thermal conduction layer was proposed based on the experiments above. A side electrode was designed to reduce the power consumption and the switching time. The optimized device was calculated to have a power consumption of 1.5 mW. The switching time of the UV-writing device was simulated to be 18.2 μs (rise) and 85 μs (down). The device is promising in the wearable device and laser radar area.
机译:聚合物热光开关功耗低,聚合物纤维的通讯窗口为532 nm。由于开关的消光比特性受到波导模式的限制,因此很少报道532 nm的聚合物热光开关。由于纤芯和包层材料的溶解,很难制造532 nm的单模波导。首先基于湿蚀刻法对532nm的聚合物M-Z热光开关进行了说明。所提出的热光开关由二氧化硅基板,光敏聚合物芯和覆层材料组成。该器件的制造和测试功耗为6.55mW,消光为4.8dB,开关时间为0.23ms(上升)/0.28ms(下降)。在上述实验的基础上,提出了结合紫外线写入技术和石墨烯导热层的优化开关结构。设计侧电极以减少功耗和切换时间。计算出优化的器件具有1.5 mW的功耗。 UV写入设备的开关时间模拟为18.2μs(上升)和85μs(下降)。该设备在可穿戴设备和激光雷达领域很有前途。

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