Advancements in flexible circuit interconnects are critical for widespread adoption of flexible electronics. Non-toxic liquid-metals offer a viable solution for flexible electrodes due to deformability and low bulk resistivity. However, fabrication processes utilizing liquid-metals suffer from high complexity, low throughput, and significant production cost. Our team utilized an inexpensive spray-on stencil technique to deposit liquid-metal Galinstan electrodes in top-gated graphene field-effect transistors (GFETs). The electrode stencils were patterned using an automated vinyl cutter and positioned directly onto chemical vapor deposition (CVD) graphene transferred to polyethylene terephthalate (PET) substrates. Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. The fabricated transistors possess hole and electron mobilities of 663.5 cm2/(V·s) and 689.9 cm2/(V·s), respectively, and support a simple and effective method of developing high-yield flexible electronics.
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机译：柔性电路互连的进步对于柔性电子的广泛采用至关重要。由于可变形性和低体电阻率，无毒液态金属为挠性电极提供了可行的解决方案。然而，利用液态金属的制造工艺具有高复杂度，低产量和显着的生产成本的缺点。我们的团队利用廉价的喷涂模板技术在顶部栅极石墨烯场效应晶体管（GFET）中沉积液态金属Galinstan电极。使用自动乙烯基切割机对电极模板进行构图，然后将其直接放置在转移到聚对苯二甲酸乙二醇酯（PET）衬底上的化学气相沉积（CVD）石墨烯上。我们的喷涂方法在相同的石墨烯样品上，在不到五分钟的时间内展示了28个晶体管的吞吐量，对于所有沟道长度为50μm的器件，其产率均为96％。制成的晶体管的空穴和电子迁移率分别为663.5 cm 2 /（V·s）和689.9 cm 2 /（V·s），并支持简单和开发高产量柔性电子产品的有效方法。
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