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Large-Scale Fabrication of Porous Gold Nanowires via Laser Interference Lithography and Dealloying of Gold–Silver Nano-Alloys

机译:通过激光干涉光刻和金银纳米合金脱合金大规模制备多孔金纳米线

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摘要

In this work, we report on an efficient approach to fabricating large-area and uniform planar arrays of highly ordered nanoporous gold nanowires. The approach consists in dealloying Au–Ag alloy nanowires in concentrated nitric acid. The Au–Ag alloy nanowires were obtained by thermal annealing at 800 °C for 2 h of Au/Ag stacked nanoribbons prepared by subsequent evaporation of silver and gold through a nanograted photoresist layer serving as a mask for a lift-off process. Laser interference lithography was employed for the nanopatterning of the photoresist layer to create the large-area nanostructured mask. The result shows that for a low Au-to-Ag ratio of 1, the nanowires tend to cracks during the dealloying due to the internal residual stress generated during the dealloying process, whereas the increase of the Au-to-Ag ratio to 3 can overcome the drawback and successfully leads to the obtainment of an array of highly ordered nanoporous gold nanowires. Nanoporous gold nanowires with such well-regulated organization on a wafer-scale planar substrate are of great significance in many applications including sensors and actuators.
机译:在这项工作中,我们报告了一种有效的方法来制造大面积且均匀的高度有序的纳米多孔金纳米线的平面阵列。该方法包括在浓硝酸中脱合金Au-Ag合金纳米线。 Au-Ag合金纳米线是通过在800°C下热退火2 h的Au / Ag堆叠纳米带而获得的,该纳米带是通过随后将银和金通过纳米剥离的光致抗蚀剂层(用作剥离工艺的掩模)蒸发而制备的。激光干涉光刻被用于光致抗蚀剂层的纳米图案化以创建大面积纳米结构的掩模。结果表明,对于低的Au / Ag比1,由于脱合金过程中产生的内部残余应力,纳米线在脱合金过程中易于破裂,而Au / Ag比增加到3克服了该缺点并成功地获得了高度有序的纳米多孔金纳米线的阵列。在晶片级平面基板上具有这种良好调节的组织的纳米多孔金纳米线在包括传感器和致动器在内的许多应用中具有重要意义。

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