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Research on Grain Refinement Mechanism of 6061 Aluminum Alloy Processed by Combined SPD Methods of ECAP and MAC

机译:ECAP与MAC相结合的SPD法加工6061铝合金的晶粒细化机理研究

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摘要

Equal channel angular pressing (ECAP) and multi-axial compression deformation (MAC) are severe plastic deformation (SPD) processes that produce bulk nanostructured materials with ultrafine grains. The grains could be observably refined by multi-pass of ECAP and MAC. This research proposed new routes of cyclic equal channel compression (CECC), which combines ECAP and MAC to increase the mechanical properties of 6061 aluminum alloy. The tests, which are conducted through electron backscattered diffraction (EBSD) and transmission electron microscope (TEM), were performed on the grain size, recrystallization distribution, misorientation distributions, dislocations, and secondary phase distributions of CECC-processed 6061 aluminum alloys on the purpose of exploring the mechanism of grain refinement. MEM is the short form for the CECC processing route of MAC + ECAP + MAC, which is one ECAP pass between two MAC passes. The tests results showed that the average grain size could reach to as much as 1.1 μm after two MEM deformation circles named MEM-MEM, with the non-annealing average grain size being 21 μm and recrystallization annealed average grain size being 28 μm. The dislocation cells, which could be transformed into sub-grains with the increase of the strain, were formed by the slip and the accumulation of dislocations. The secondary phase was Mg2Si, which could prevent the refined grains from growing up again by pinning at the grain boundaries. Above all, the dislocation proliferation and secondary phases will both lead to the grain refinement.
机译:等通道角挤压(ECAP)和多轴压缩变形(MAC)是严重的塑性变形(SPD)过程,可产生具有超细晶粒的块状纳米结构材料。可以通过ECAP和MAC的多次通过来细化晶粒。这项研究提出了新的循环等通道压缩(CECC)路线,该路线结合了ECAP和MAC以提高6061铝合金的机械性能。目的是通过电子背散射衍射(EBSD)和透射电子显微镜(TEM)进行的测试,目的是针对CECC处理的6061铝合金的晶粒尺寸,再结晶分布,取向差,位错和第二相分布进行的。探索晶粒细化的机理。 MEM是MAC + ECAP + MAC的CECC处理路由的缩写,是两个MAC通道之间的一个ECAP通道。测试结果表明,经过两个名为MEM-MEM的MEM变形圈,平均晶粒尺寸可达1.1μm,非退火平均晶粒尺寸为21μm,再结晶退火平均晶粒尺寸为28μm。位错单元是由滑移和位错的积累形成的,可随应变的增加而转变为亚晶粒。第二相是Mg2Si,它可以通过钉扎在晶界上来防止细化晶粒再次长大。最重要的是,位错扩散和第二相都将导致晶粒细化。

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