In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10−4 Ω/cm), carrier concentration (4.1 × 1021 cm−3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm−3) with a high figure of merit (81.1 × 10−3 Ω−1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
展开▼
机译：在这项研究中，直流磁控溅射被用来制造掺钛的铟锡氧化物（ITO）薄膜。在350 nm厚的薄膜生产过程中，溅射功率固定为100 W，衬底温度从室温升高到500°C。掺钛的ITO薄膜具有优异的薄膜电阻率（1.5×10 -4 Ω/ cm），载流子浓度（4.1×10 21 cm -） 3 ），载流子迁移率（10 cm 2 / Vs）和在400°C的沉积温度下在400–800 nm波长下的平均可见光透射率（90％）。掺钛的ITO合金的优良载流子浓度（> 10 21 cm -3 ）具有较高的品质因数（81.1×10 −3 Ω −1 ）证明了Ti掺杂的显着贡献，表明它们非常适用于光电器件。
展开▼
