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Theoretical Methods of Domain Structures in Ultrathin Ferroelectric Films: A Review

机译:超薄铁电薄膜畴结构的理论方法研究进展

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摘要

This review covers methods and recent developments of the theoretical study of domain structures in ultrathin ferroelectric films. The review begins with an introduction to some basic concepts and theories (e.g., polarization and its modern theory, ferroelectric phase transition, domain formation, and finite size effects, etc.) that are relevant to the study of domain structures in ultrathin ferroelectric films. Basic techniques and recent progress of a variety of important approaches for domain structure simulation, including first-principles calculation, molecular dynamics, Monte Carlo simulation, effective Hamiltonian approach and phase field modeling, as well as multiscale simulation are then elaborated. For each approach, its important features and relative merits over other approaches for modeling domain structures in ultrathin ferroelectric films are discussed. Finally, we review recent theoretical studies on some important issues of domain structures in ultrathin ferroelectric films, with an emphasis on the effects of interfacial electrostatics, boundary conditions and external loads.
机译:本文综述了超薄铁电薄膜畴结构理论研究的方法和最新进展。综述首先介绍了一些与超薄铁电薄膜中的畴结构研究相关的基本概念和理论(例如,极化及其现代理论,铁电相变,畴形成和有限尺寸效应等)。然后阐述了用于域结构仿真的各种重要方法的基本技术和最新进展,包括第一性原理计算,分子动力学,蒙特卡洛仿真,有效的哈密顿方法和相场建模以及多尺度仿真。对于每种方法,都讨论了其与其他方法相比在超薄铁电薄膜中建模畴结构的重要特征和相对优点。最后,我们回顾了有关超薄铁电薄膜中畴结构一些重要问题的最新理论研究,重点是界面静电,边界条件和外部载荷的影响。

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