基于氧化工艺的二氧化硅层厚度的研究

摘要

氧化工艺是集成电路工艺流程中一项重要工艺.本文对热氧化生成的二氧化硅层厚度进行了理论计算和实际测定,并列出了6个样品的干氧和湿氧时间、理论计算值、实际测值及产生的误差值,实验结果表明利用本文中的工艺参数能达到较好的工艺效果.%The oxidation process is an important process in integrated circuit process.In this paper, the calculation and the actual measurement of thickness of silicon formed by thermal oxidation were did, and the dry and wet oxygen time, the theoretical value, theactual measured value and error value of six samples were listed, and the experimental results show that process parameters used in this paper can achieve better results.