高气压不同碳源浓度对纳米金刚石薄膜生长影响研究

摘要

利用微波等离子体气相沉积法,以氢气、氩气、甲烷为气源,在20~26 kPa,碳源浓度0.3%~1%条件下,通过改变气压与碳源浓度来制备纳米金刚石薄膜.运用Raman、SEM、XRD分别表征纳米金刚石薄膜的质量、表面形貌、晶粒大小.结果表明随着气压升高,沉积速率越快,薄膜质量先升高后降低.在一定气压范围内可以通过增大气压减少碳源浓度,能获得相对高质量的纳米金刚石薄膜.%The influence of total gas pressure(20~26kPa)and methane concentration(0.3%~1%)on diamond growth using mixture gas of H2/Ar/CH4source by microwave plasma chemical vapor deposition(MPCVD)was investigat-ed.For a fixed methane concentration,characterization by Raman spectroscopy,scanning electron microscopy and X-ray diffraction indicated Characterization of nano diamond quality,surface morphology,grain size. The results show that growth rate increase with pressure increasing,but quality of nano-diamond films first become better then become worse while the pressure increases.Then using higher pressure and litter methane concentration could gain highly quality nano-crystalline diamond films.