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Structure and magnetic properties of amorphous and polycrystalline Fe3O4 thin films

机译:非晶态和多晶态的Fe3O4薄膜的结构和磁性

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摘要

Half-metallic Fe3O4 films prepared by DC magnetron reactive sputtering with a tantalum(Ta) buffer layer was investigated. Primary emphasis is placed on the structural impact on its magnetic properties. The experimental results show that the amorphous Fe3O4 films exhibit a superparamagnetic response at a large-scale from 20 nm to 150 nm,and the magnetoresistance (MR) isn't detected. By contrast,the polycrystalline Fe3O4 films possess large saturation magnetization Ms of 420 A/(kg-cm) and a clear magnetoresistance with a field of 40 kA/m. The unusual properties for the amorphous Fe3O4 film are attributed to the existing large density of the similar structure as anti-phase boundaries in the film.
机译:研究了通过DC磁控反应溅射与钽(TA)缓冲层制备的半金属Fe3O4薄膜。初级重点放置在结构撞击上对其磁性的影响。实验结果表明,无定形Fe3O4膜在20nm至150nm的大规模上表现出超顺磁响应,并且未检测到磁阻(MR)。相反,多晶Fe3O4膜具有420a /(kg-cm)的大饱和磁化强度Ms,含有40ka / m的透明磁阻。无定形Fe3O4薄膜的不寻常性质归因于存在与薄膜中的抗相边界类似结构的大密度。

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  • 来源
    《中国有色金属学报(英文版)》 |2006年第0z1期|249-252|共4页
  • 作者单位

    School of Micro-electronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Micro-electronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Micro-electronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Micro-electronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

    School of Micro-electronics and Solid-state Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China;

  • 收录信息 中国科学引文数据库(CSCD);
  • 原文格式 PDF
  • 正文语种 chi
  • 中图分类 金属学与热处理;
  • 关键词

    half-metal; Fe3O4; spintronic devices; magnetoresistance;

    机译:半金属;Fe3O4;自旋电子器件;磁阻;
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