采用共沉淀法制备了Y2 O3∶Tb3＋和Y2 O3∶ Tb3＋，Yb3＋两种样品。通过扫描电子显微镜（SEM ）、透射电子显微镜（T EM ）、X射线衍射仪（XRD ）和荧光光谱仪分析和测试了样品的形貌、微结构和室温下的荧光光谱，得到了不同掺杂浓度、退火温度、溶液p H值下Y2 O3∶ T b3＋的最优工艺制备条件：T b3＋浓度1.5％、退火温度1400℃、溶液偏碱性环境下，样品在300 nm光激发下于543 nm处有最大绿光发射。详细分析了T b3＋能级结构和跃迁属性与实验光谱的对应关系，阐述了工艺条件的影响机理和主要影响样品发光的荧光猝灭效应。制备的Y2 O3∶Tb3＋，Yb3＋粉体，敏化离子Tb3＋与激活离子Yb3＋间存在能量传递过程，使样品在近红外区有可观的发光，从能级角度对两离子间的合作下转换发光过程进行了描述，同样分析了该体系下的荧光猝灭过程。实验证明近红外量子剪裁可有效提高掺杂离子的发光效率，在硅太阳能电池等领域有广阔的应用前景。%Y2 O3 ∶ Tb3+ and Y2 O3 ∶ Tb3+ ,Yb3+ samples were prepared by co-precipitation method .The morphology ,micro-structure and fluorescence spectra at room temperature of samples were characterized by scanning electron microscopy (SEM ) , transmission electron microscopy(TEM) ,X-ray diffraction(XRD) and fluorescence spectrometer ,The optimal process condi-tions of Y2 O3 ∶Tb3+ under different doping concentrations ,annealing temperature ,and pH value of the solution were obtained :Tb3+ concentration is 1.5% ,annealing temperature is 1 400 ℃ ,an alkaline solution environment ,and samples under 300 nm light excitation have the largest green light emission at 543 nm .The corresponding relation of Tb3+ ion level structure and tran-sition properties and experimental spectra were analyzed in detail ,and we explained the influence mechanism of process condi-tions and the fluorescence quenching process mainly effects luminous intensity of samples .The energy transfer from sensitizing ions Tb3+ to active ion Yb3+ was confirmed ,it made the sample have considerable emitting light in the near-infrared region ;the authors described the process of cooperation conversion luminescence between the two ions from the level transition angle ,and also analyzed the system of fluorescence quenching process .Test results showed that the near infrared quantum cutting can effec-tively improve the luminous efficiency of doped ions ,and will have broad application prospects in the silicon solar cells and other fields .
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