[1]School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;
[2]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,University of Chinese Academy of Sciences,Beijing 100083,China;
[2]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,University of Chinese Academy of Sciences,Beijing 100083,China;
[4]Department of Applied Physics,School of Physics and Electronics,Hunan University,Changsha 410082,China;
[2]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,University of Chinese Academy of Sciences,Beijing 100083,China;
[1]School of Materials and Energy,Guangdong University of Technology,Guangzhou 510006,China;
[2]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,University of Chinese Academy of Sciences,Beijing 100083,China;
[3]Beijing Computational Science Research Center,Beijing 100094,China;
van der Waals heterostructures; gaint Stark effect; Coulomb interaction; charge transfer;