直流磁控溅射制备透明导电ZAO薄膜退火处理时间的研究

摘要

为改进太阳能薄膜材料制备工艺,利用直流磁控溅射方法,在较高氩气压强--12.7 Pa下制备出透明导电掺铝ZnO (ZAO)薄膜,并对其进行退火处理时间的研究.与其他研究者不同,利用较高压强也制备出高性能ZAO薄膜,并且可以利用退火处理改善薄膜的晶体结构、内应力、表面形貌以及光电性能.薄膜的电阻率随着退火时间的增加而降低,从原位沉积时的3.5×10-3 Ω·cm,下降到1.9×10-3 Ω·cm;薄膜的平均透光率增加到80%以上,光谱吸收边发生蓝移.结果表明,退火2 h,ZAO性能改善最优.%In order to improve the quality of thin films for solar cells, transparent conductive Al - doped ZnO (ZAO) thin films were fabricated by direct current (DC) sputtering with a high work pressrue of 12.7 Pa and annealed for different time.Different from the other scientific achievements, high quality ZAO thin films could be prepared for high work pressure, and the influence of annealing time on properties of ZAO thin films were studied.It shows that the crystal structures of films are improved and the surface morphology changes significantly because of annealing.The electrical and optical properties are obviously influenced by annealing for different time while the resistivity declined from of 3.5 × 10 -3 Ω · cm to 1.9 × 10 -3Ω · cm and the average transmittance increases to more than 80％.A blue shift of the absorption edge is observed with the increase of annealing time.Annealing for 2hours is best for ZAO films.