磁性半导体隧道结中自旋注入效率的温度效应

摘要

利用了隧道哈密顿方法研究了稀磁性半导体(DMS)到非磁性半导体(SM)隧道结中自旋注入效率与温度的关系.计算表明,随着温度的升高,自旋注入效率逐渐降低.这主要是由两方面的原因引起的,其一温度升高稀磁半导体的极化率降低；其二温度升高自旋反转隧穿增加.%Using the tunnel Hamiltonian method, the spin injection efficiency from diluted magnetic semiconductor (DMS) to no-magnetic semiconductor (SM) with temperature is studied. Numerical calculations indicate that with increasing temperature spin injection efficiency decreases. This is mainly caused by two reasons; the first the polarization rate of diluted magnetic semiconductor is reduced with raising of temperature; the second the spin-flip tunneling is increased with the temperature raised.