Growth Kinetic Studies for MOCVD CdTe and HgCdTe Epilayers on GaAs Substrates

摘要

The growth rates of CdTe and CMT on GaAs and on CdTe / GaAs substrates were studied as a functionof temperature and gas composition. A Langmuir-Hinshelwood Model for surface reaction control region issuggested. The CdTe/GaAs interface was examined by X-ray double crystal diffraction, laser Ramanspectroscopy and transmission electron microscopy (TEM). A defect layer was observed at CdTe / GaAs inter-face. The relationship between interface qualities and electrical properties of CMT overlayers was discussed.