多管并联SiC MOSFET驱动电路串扰抑制方法

摘要

Due to the crosstalk problem of the multi-devices parallel silicon carbide (SiC) metal oxide semiconductor field effect transistor(MOSFET) drive circuit in the high power and high frequency series resonant inverter,a new kind of multi-devices parallel SiC MOSFET drive circuit with crosstalk suppression is designed,to optimize the drive circuit structure and device parameters.A power supply prototype of the high.power high frequency H-bridge series resonant inverter is built,the drive circuit of the prototype is tested to verify that the design is effective in the crosstalk suppression.%为解决大功率高频串联谐振逆变器中多管并联碳化硅(SiC)金属-氧化物半导体场效应晶体管(MOSFET)驱动电路存在的串扰问题,分析了驱动电路串扰问题产生的机理和常用驱动串扰抑制方法,优化了驱动电路结构和器件参数,设计了一种具有串扰抑制作用的多管并联SiC MOSFET驱动电路.搭建了一台SiC MOSFET高频H桥串联谐振逆变电源样机,对驱动电路进行了相关测试,验证了所设计的驱动电路可有效抑制串扰.