GaN Power ICs Revolutionize High-density,High-efficiency,Cost-effective Power Conversion

摘要

40 years ago,there was a revolution in power converter efficiency,density,size and cost,with the introduction of silicon MOSFETs,PWM integrated circuits (ICs),new magnetic materials and new switch-mode power topologies.Now,another revolution is enabled with wide band-gap gallium nitride (G aN) power ICs,new control ICs,new magnetics and the commercialization of high-frequency topologies.Monolithic integration combines GaN FET,GaN logic,GaN driver and now GaN level-shifters,to enable MHz+switchiag without parasitic concerns.This paper introduces the AllGaNTM 650 V lateral GaN technology,essential GaN power ICs features and performance across a wide range of applications,at up to 1 MHz,from 25 W to 3.2 kW.