The emerging of commercial high-voltage gallium nitride (GaN) power devices provides extraordinary switching performance over silicone devices, which enables high-voltage power conversion switching at megahertz range. Such outstanding features also pose strong challenges for device packaging design since the package parasitics can significantly influence the device switching characteristics, and thus can shadow the advantages brought by GaN devices. Designers have been dealing with these challenges brought by high du/dt and high-frequency switching operation even since the silicon (Si) era when fast switching Si MOSFET is first developed and came up with lots of inspiring advanced power module packaging structures to mitigate the problems. This paper presents a review of advanced power module packaging and integration structures that are suitable for high frequency power conversion. The review covers the heritage from the high frequency Si MOSFET packaging to the state-of-the-art for GaN devices.
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