Numerical Simulation of Hydrogen Dilution Effects on Deposition of Silicon Film at Atmospheric Pressure Radio-Frequency Argon Silane Plasma

摘要

Based on the one-dimensional fluid model, the characteristics of homogeneous dischargeswith hydrogen diluted silane and argon at atmospheric pressure are numerically investigated.The primary processes of excitation and ionization and sixteen reactions of radicals withradicals in silane/hydrogen/argon discharges are considered. The effects of hydrogen dilution onthe densities of species (e, H, SiH_3^+, SiH_3^-, SiH_3,) are analyzed. The simulation results show thatthe highest densities of e, SiH_3^+, H, SiH_3^-, SiH_3 correspond to the optimal dilution concentration ofH_2. The deposition rate of μc-Si:H film depends on the SiH_3 concentration, and atomic hydrogenin the plasma is found to play an important role in the crystallization fraction of the depositedfilms. This model explains the effects of H_2 dilution on the deposition rate and crystallized fractionof μc-Si:H film growth.