高功率InGaAs/GaAsP应变量子阱垂直腔面发射激光器列阵

摘要

To improve the output powers of Vertical Cavity Surface Emitting Lasers (VCSELs), a 977 nm VCSEL array with three In0.2Ga0.8 As/GaAs0.92P0.08 strained Quantum Wells(QWs) was studied. The structures of the QWs were optimized and GaAsP with a larger band gap was chosen as the barrier material, and the band offsets of In0.2Ga0.8As/GaAs0.92P0.08 were calculated. The output powers of the devices which used In0.2Ga0.8As/GaAs0.92P0.08 and In0.2Ga0.8 As/GaAs QWs were simulated theoretically and analyzed compare-tively, respectively and the pulsed peak powers of two array devices were measured. Then, the performance of the array device was estimated by a functional method using a p-parameter determined by the turn-on voltage , threshold current, and the differential resistance. Experimental results show that the 4×4 VCSEL array with In0.2Ga0.8As/GaAs0.92P0.08 QWs and an emitting area of 0. 005 cm2 can achieve a pulsed peak power of 123 W when the injecting current is 110 A, and its power density and slope efficiency are 45. 42 kW/cm2 and 1. 11 W/A,respectively. This output power is 13 % larger than that of the array with In0.2Ga0.8 As/GaAs QWs and the same emitting area. Furthermore, the values of p parameter are 15 and 13 under CW operation and pulsed operation, respectively, which indicates that the device has relatively good performance. In conclusion, the 4×4 VCSEL array with three In0.2Ga0.8As/GaAs0.92P0.08 strained QWs is able to achieve higher output powers.%为提高垂直腔面发射激光器(VCSEL)的输出功率,对具有3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱结构,发射波长为977 nm的VCSEL列阵进行了研究.对量子阱结构进行了优化,选择具有更宽带隙的GaAsP作为势垒材料,计算了In0.2Ga0.8As/GaAs0.92P0.08量子阱的带阶.对采用In0.2Ga0.8As/GaAs0.92P0.08和In0.2Ga0.8As/GaAs两种量子阱结构的器件的输出功率进行了理论模拟和比较分析.分别测试了上述两个列阵器件的脉冲峰值功率并利用由开启电压、阈值电流和串联电阻决定的p参数评估了列阵器件的输出性能.实验结果表明,当注入电流为110 A时,发光面积为0.005 cm2的In0.2Ga0.8As/GaAs0.92P0.08 4×4 VCSEL列阵获得了123 W的脉冲峰值功率,比具有相同发光面积的In0.2Ga0.8As/GaAs列阵器件的脉冲峰值功率大13％,前者相应的功率密度和斜率效率分别为45.42 kW/cm2和1.11W/A.连续和脉冲工作下的p值分别为15和13,表明器件在两种工作条件下都具有相对较好的输出性能.得到的结果证明,包含3个In0.2Ga0.8As/GaAs0.92P0.08应变量子阱的4×4VCSEL列阵器件能够获得较高的功率输出.