首页> 中文期刊> 《核技术:英文版》 >X-band deflecting cavity design for ultra-short bunch length measurement of SXFEL atSINAP

X-band deflecting cavity design for ultra-short bunch length measurement of SXFEL atSINAP

         

摘要

For developing the X-ray Free Electron Lasers test facility(SXFEL) at Shanghai Institute of Applied Physics,Chinese Academy of Sciences(SINAP), ultra-short bunch is the crucial requirement for excellent lasing performance. It is a big challenge for deflecting cavity to measure the length of ultra-short bunch, and higher deflecting gradient is required for higher measurement resolution. X-band travelling wave deflecting structure has features of higher deflecting voltage and compact structure, which has good performance at ultra-short bunch length measurement. In this paper, a new X-band deflecting structure is designed to operate in HEM11-2π/3 mode.For suppressing the polarization of deflecting plane of the HEM11 mode, two symmetrical caves are added on the cavity wall to separate two polarized modes.

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号