Laboratory of Nanophotonic Functional Materials and Devices Institute of Semiconductor Science and Technology South China Normal University Guangzhou 510631 People’s Republic of China;
Laboratory of Nanophotonic Functional Materials and Devices Institute of Semiconductor Science and Technology South China Normal University Guangzhou 510631 People’s Republic of China;
Institute of Semiconductor Guangdong Academy of Sciences Guangzhou 510651 People’s Republic of China;
Institute of Semiconductor Guangdong Academy of Sciences Guangzhou 510651 People’s Republic of China;
Institute of Semiconductor Guangdong Academy of Sciences Guangzhou 510651 People’s Republic of China;
Laboratory of Nanophotonic Functional Materials and Devices Institute of Semiconductor Science and Technology South China Normal University Guangzhou 510631 People’s Republic of China;
Institute of Semiconductor Guangdong Academy of Sciences Guangzhou 510651 People’s Republic of China;
Laboratory of Nanophotonic Functional Materials and Devices Institute of Semiconductor Science and Technology South China Normal University Guangzhou 510631 People’s Republic of China;
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 People’s Republic of ChinaSchool of Materials Science and Engineering Georgia Institute of Technology Atlanta GA 30332‑0245 USA;
AlGaN/AlN/GaN heterojunction; Epitaxial lift-off; Flexible membrane; Two-dimensional electron gas; Piezotronic effect;