State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University 2 South Taibai Road Xi’an 710071 People’s Republic of China;
All-inorganic CsPbI3 perovskites; Interface engineering; Doping; ZnO; Simulation;