一种肖特基势垒强型N-AlGaN基 MSM日盲紫外光电探测器

摘要

An n⁃type AlGaN⁃based metal–semiconductor–metal(MSM)solar⁃blind ultraviolet(UV)photodetector(PD) taking thin high⁃resistive AlGaN cap layer as Schottky⁃barrier enhancement layer was developed. Compared with the control PDs without the thin cap layer,dark current of PD with high⁃resistive AlGaN cap layer is significantly small. At the bias voltage of 5 V,dark current of PD with high⁃resistive AlGaN cap layer is 1.6 pA,its responsivity is 22.5 mA/W,solar⁃blind/UV rejection ra⁃tio is more than 103,and detectivity is 6.3×1010 cm·Hz1/2/W.%研制一种以薄的高阻AlGaN覆盖层作为肖特基势垒增强层的N⁃AlGaN基金属⁃半导体⁃金属（MSM）日盲紫外光电探测器。与无覆盖层的参考器件相比，覆盖高阻AlGaN层后探测器的暗电流大幅度减小。在5 V偏压下，覆盖高阻AlGaN层的光电探测器的暗电流为1.6 pA，响应度为22.5 mA/W，日盲紫外抑制比大于103，探测率为6.3×1010 cm·Hz1/2/W。