EEPROM存储器电荷泵系统抗辐照加固研究

摘要

EEPROM存储系统中常采用电荷泵来实现高压和负压,在辐照环境中由于辐照对某些高压器件及电路的影响,可能导致电荷泵产生的电压出现偏移甚至失效,以致影响整个存储器的工作.主要针对电荷泵系统中高压器件的辐照特性进行研究.根据辐照试验前后的测试结果对高压器件以及电路的变化趋势进行分析.通过对辐照环境下高低压器件在阈值电压偏移上的差别分析并结合器件的辐照机理,推断出辐照对高压器件的影响趋势,并针对高压器件辐照特性来研究电荷泵系统中电荷泵电路及基准源电路的抗辐照加固设计方法,以保证整个电荷泵系统在辐照环境下可以为EERPOM存储器提供正常的工作电压.%The charge pump is often used to achieve high voltage and negative voltage of EEPROM system.In the radiation environment,due to the effect of irradiation on some high voltage devices and circuits,the voltage generated by the charge pump may result in offset or even failure to affect the operation of the memory.This paper aims to study the radiation characteristics of high voltage devices in charge pump system.According to the test result of high voltage devices and the circuits before and after irradiation,we analyze the change trend of circuit.Based on the analysis of the difference shift,combined with the mechanism of irradiation device,in the threshold voltage of high and low voltage devices in the radiation environment,we conclude the effects of irradiation on high voltage device.The radiation hardness design method is researched to reinforce pump circuit and reference circuit for providing the normal operating voltage for EEPROM memory in the radiation environment by charge pump system.