基于CF4/Ar高密度感应耦合等离子体的BZN薄膜的刻蚀工艺研究

摘要

使用CF4/Ar高密度感应耦合等离子体(ICP)对磁控溅射法制得的铌酸锌铋(BZN)薄膜进行了干法刻蚀工艺研究.分析了BZN薄膜的刻蚀速率随工艺气体流量比、总流量和工作压强的改变而出现极大值的原因,展示了BZN薄膜的刻蚀速率随ICP功率的增大而线性增加的趋势.研究结果表明,使用CF4/Ar感应耦合等离子体对BZN薄膜进行刻蚀的机理为物理辅助的化学反应刻蚀.BZN薄膜的最佳刻蚀工艺参数为CF4/Ar流量比3/2、总流量25sccm、工作压强1.33Pa、ICP功率800W,使用此参数对BZN薄膜进行刻蚀,最大刻蚀速率为26nm/min,刻蚀后薄膜边缘齐整、表面光滑、形状完整.%The etching characteristics of the bismuth zinc niobate (BZN) thin film deposited by magnetron sputtering were investigated in CF4/Ar high density inductively coupled plasmas (ICP). Maximum etch rate of BZN thin film was illustrated with the variation of gas flow ratio, total gas flow, and process pressure. With the increase of ICP power the etch rate of BZN thin film increased monotonously. The results indicated that the etching mechanism of the BZN thin film in CF4/ Ar inductively coupled plasmas was physics assisted chemical reactive etching. Optimum etching parameters were obtained for the BZN thin films: 3/2 for CF4/Ar gas flow ratio, 25sccm for total gas flow, 1. 33Pa for process pressure, and 800W for ICP power. The maximum etch rate of the BZN thin film was approximately 26 nm/min, and the surface morphology of the etched BZN thin film was smooth and hardly changed in shape.