第二步沉积速率和钠掺杂对低温生长铜铟镓硒薄膜结构及电阻率的影响

摘要

首先采用热蒸发法在镀钼的 PI 衬底上沉积 NaF 薄膜,然后采用低温三步共蒸法在有无沉积 NaF 的 PI 衬底上沉积铜铟镓硒(CIGSe)薄膜,研究了第二步沉积速率和钠掺杂对 CIGSe薄膜结构及电阻率的影响。结果表明：随着第二步沉积速率增大,CIGSe 薄膜的晶粒尺寸显著增大,(220/204)择优取向生长逐渐增强；随着钠掺杂量增加,CIGSe 薄膜的电阻率显著下降,晶粒尺寸逐渐减小,择优取向从(220/204)织构方向转变为(112)织构方向,并出现镓的两相分离现象。%Firstly,NaF thin film was deposited on PI substrate with Mo interlayer,and then low temperature three-stage co-evaporation processes were used to deposite Cu(In,Ga)Se2 (CIGSe)thin films on PI substrate with/without NaF film.The influences of deposition rate in the second stage and sodium incorporation on structure and resistivity of CIGSe thin films were analyzed.Results show that,with the increase of deposition rate in the second stage,the grain size of CIGSe thin films enhanced sharply and the film exhibited more pronounced (220/204 ) preferred orientation.With the increase of sodium incorporation content,resistivity of CIGSe thin films observably reduced,while the grain size decreased and the orientation transformed from (220/204 )to (1 12 ).Ga phase separation phenomenon was observed with the increase of sodium incorporation content.