Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si

摘要

Current laser-based display and lighting applications are invariably using blue laser diodes (LDs) grown on free-standing GaN substrates,which are costly and smaller in size compared with other substrate materials.1-3 Utilizing less expensive and large-diameter Si substrates for hetero-epitaxial growth of indium gallium nitride/gallium nitride (InGaN/GaN) multiple quantum well (MQW) structure can substantially reduce the cost of blue LDs and boost their applications.