碳化的硅纳米孔柱阵列的光致发光特性

摘要

采用水热腐蚀法制备了硅纳米孔柱阵列( Si-NPA)，并对其进行了不同时间的高温碳化处理。通过对样品光致发光谱进行对比分析，发现Si-NPA经碳化处理后红光发光峰消失，蓝光发射峰强度增强，同时出现一个新的紫外光发光峰。结合对Si-NPA中碳原子存在状态的拉曼分析，蓝光发射峰、紫外光发射峰被分别归因于氧化硅的缺陷发光和碳原子掺杂Si-NPA引起的缺陷发光。上述研究结果为澄清Si-NPA的发光机制以及实现其发光稳定性提供了有益的信息。%The samples of silicon nanoporous pillar array ( Si-NPA ) were prepared by a hydrothermal etching method and were carbonized at high temperature with different times. The photoluminescence ( PL) spectra of carbonized Si-NPA were measured and compared with that of freshly prepared samples. It was found that after carbonization, an ultraviolet PL peak newly appeared and the blue PL was greatly enhanced, accompanied with the disappearance of the red PL peak of Si-NPA. Combined with the Raman analysis on the existing status of carbon atoms in Si-NPA, the blue and the ultraviolet emissions were at-tributed to the PL from the defect states of silicon oxide and doping carbon atoms in Si-NPA, respective-ly. The results might provide some useful information for clarifying the PL mechanism and realizing stable PL of Si-NPA.