采用磁控溅射法在不同气压下溅射石墨靶制备多种a-C基体并在其上沉积WS x薄膜.采用扫描电镜、能谱仪、原子力显微镜、X射线衍射仪、Raman光谱仪和X射线光电子能谱对薄膜的形貌、成分、组织结构和元素价态等进行了表征.采用纳米压痕仪、划痕仪和球盘式摩擦磨损试验机对薄膜的硬度、结合力和摩擦学性能进行了测试.结果表明:a-C基底上WSx薄膜呈微晶或非晶结构,a-C沉积气压1.0 Pa时WS2薄膜出现(101)晶面衍射峰.随着a-C基底沉积气压的升高,WS x薄膜表面先逐渐致密,后略有下降,nsw比呈下降趋势,显著低于硅基底WSx薄膜,WSx薄膜的硬度在6～8.5 GPa之间.在大气环境下,基底沉积气压为0.6 Pa的WSx的摩擦系数最低,耐磨性最差.%Amorphous carbon films (a-C) were prepared on Si wafers by magnetron sputtering graphite target with different deposition pressures and WSx films were grown onto the a-C films subsequently .The morphology ,composition and microstructure of the films were characterized by scanning electron microscopy ,energy disperse spectroscopy ,atomic force microscope ,X-ray diffraction ,Raman spectroscopy and X-ray photoelectron spectroscopy .The hardness ,adhesion strength and tribological properties of the films were evaluated by nano-indenter , scratching tester and ball-on-disk tribometer . The results show that the WSx film with the a-C matrix deposition pressure below 0 .8 Pa is of amorphous structure and a crystalline WS2 film is grown when the a-C matrix is deposited at 1 .0 Pa . With the deposition pressure of a-C matrix increasing ,the surface of the WSx films becomes compact below 0 .6 Pa ,and the mole ratio of S to W of the WSx films trends to decline ,which is significantly lower than that of WSx film deposited on silicon wafer .The hardness of WSx films in the range of 6 GPa to 8 .4 GPa .In humid air ,the WSx film with the a-C matrix deposited at 0 .6 Pa has the lowest friction coefficient and the worst wear resistance .
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