烧绿石结构 La2 Zr2 O7薄膜的外延生长研究

摘要

In this paper, The La2 Zr2 O7 ( LZO) oxide thin film with pyrochlore structure was fabricated on bi-axial textured NiW substrates by chemical solution deposition ( CSD) method, and the influence of elevated temperature routes on epitaxial growth behavior of LZO films during the heat-treatment process was studied. The texture and surface morphology of LZO thin films under different heat treatments were characterized by X-ray diffraction (XRD) and a-tomic force microscopy (AFM). The result indicates that the elevated temperature rate has an important effect on the texture degree and surface morphology of LZO thin films on metallic sub-strates. It can be considered that LZO thin films with sharp texture degree and smooth surface could be obtained by choosing an appropriate heat-treatment route using CSD method. Moreo-ver, LZO thin film fabricated at the optimal heat-treatment condition is suitable to be used as the buffer layer for coated conductors.%利用化学溶液沉积(CSD)法在双轴织构的 NiW 基带上制备了烧绿石结构的 La2 Zr2 O7(LZO)氧化物薄膜，并研究了热处理过程中升温路线对其外延生长行为的影响。利用 X 射线衍射(XRD)和原子力显微镜(AFM)对不同热处理路线下所制得的 LZO 薄膜的织构和表面形貌进行了表征。结果表明：升温速率对 LZO 薄膜的织构度以及表面形貌影响较大。可以认为通过选择合适的热处理路线，利用 CSD 法可以制得具有锐利织构度、表面平整且无明显缺陷的 LZO 薄膜，同时，在最佳热处理条件下制得的 LZO 薄膜适合用作涂层导体缓冲层。