高效率制备超导涂层导体SmBiO3缓冲层

摘要

In order to shorten the preparation period of buffer layer for high-performance coated conductors,SmBiO3 (SBO) buffer films were efficiently deposited on surface-oxidation epitaxy processed NiO (100)/NiW substrates by chemical solution deposition (CSD) method,using a precursor solution prepared by dissolving samarium nitrate and bismuth nitrate precursors in lactic acid.The effect of sintering temperature on the SBO film was systematically studied.Then,the YBa2Cu3 O7-δ (YBCO) superconductive film was deposited on the SBO buffer layer to test its utility.Results show that a highly textured,smooth and dense SBO thin film was obtained at 798.5 ℃,and the SBO thin film could be prepared within a period of less than 2 h.The YBCO superconductive layer was successfully deposited on the SBO layer with a superconducting transition temperature of 89 K and a critical current density of 1.46 MA/cm2(77 K,0 T),which could be used in some electric power applications.Therefore,the proposed method for preparing SBO buffer layer can be used for rapid preparation of coated conductors.%为了缩短高温超导涂层导体缓冲层薄膜制备周期,采用自开发的前驱溶液,以乳酸为溶剂,硝酸钐和硝酸铋为溶质,在应由表面氧化外延法所得的衬底(NiO(l00)/NiW)上,用化学溶液沉积快速制备了SmBiO3缓冲层薄膜,研究成相温度对SmBiO3薄膜的影响;在SmBiO3薄膜上沉积YBa2 Cu3 O7-δ超导层,检验其效用.研究结果表明:在798.5℃下制备的SmBiO3缓冲层薄膜乎整致密,并且高度织构,缓冲层薄膜制备周期缩短到2h以内;在SmBiO3上所沉积的超导层薄膜超导转变温度为89 K,超导临界电流密度为1.46MA/cm2(77 K、0T),达到了某些电力应用要求;该SmBiO3薄膜制备方法可用于高温超导涂层导体的快速制备.