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Red Organic Light-Emitting Diodes Based on Energy Levels Matching of Dopant with the Host Materials

         

摘要

By doping red dye 4 dicyanomethylene 2 ( tert butyl) 6 methyl 4H pyran(DCJTB) in the tris (8 hydroxyquinolinato) metal Mq 3(where M = Al, Ga, In) chelate complexes, a series of red dopant organic light emitting diodes with different doping concentrations have been fabricated. The electroluminescence efficiency of these red diodes with a DCJTB doped Mq 3 emitting layer is found to be decreased markedly with the increasing of doping concentration. Electroluminescence characteristics of these devices are studied in terms of energy levels matching of red dopant with the host materials and carrier transporting layers.

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