0.9Pb（Sc0.5Ta0.5）O3-0.1PbTiO3/PbTiO3多层薄膜制备及铁电性研究

摘要

The 0. 9Pb(Sc0. 5 Ta0. 5 )O3 - 0. 1PbTiO3 / PbTiO3 multilayer thin films((PSTT10 / PT)3 )were de-posited on SiO2 / Si(100)substrates by radio frequency magnetron sputtering technique with LaNiO3 buffer and e-lectrode layer,and the films were subsequently annealed by a two - step rapid thermal annealing approach at peak temperature of 750 ℃. The P - E loops and leakage current characteristics of the films were measured. The result shows that the in - situ deposited multilayer thin films possess well ferroelectric properties and it provided possibil-ity to prepare PSTT under the low temperature. The after - annealed films exhibit a slight degradation on ferroelec-tric properties. It is attributed to the loss of Pb inside the films.%以 LaNiO3做缓冲层，用射频磁控溅射法在 SiO2/ Si（100）衬底上制备出0.9Pb（Sc0.5 Ta0.5）O3-0.1Pb-TiO3/ PbTiO3铁电多层薄膜.采用两步法在峰值温度750℃对薄膜进行退火.通过电滞回线和漏电流曲线对薄膜的铁电性能进行了测量.研究发现，原位生长的薄膜已经具备了较好的铁电性，这为（1- x）Pb（Sc0.5 Ta0.5）O3- x0.1PbTiO3薄膜的低温制备提供了可能性.经过退火后，薄膜的铁电性略有下降，高温下铅的损失可以很好的解释这一现象.