The transient behavior of a semiconductor device of heat conduction is considered. One Poisson equation for the electric potential is discretized by a finite element method; two equations of convection-diffusion for the electron density and hole density are treated by implicit-explict multistep finite element methods; one heat equation for the temperature is discretized by implicit multistep finite element methods. The optimal L2-norm error estimates are derived.%考虑热引导半导体设备中的传输行为. 用一个有限元法离散电子位势所满足的Poisson方程;用隐式-显式多步有限元法处理电子密度和空洞密度满足的两个对流-扩散方程;热传导方程用隐式多步有限元法离散. 推导了优化的L2范误差估计.
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