GaNAs的声子拉曼散射研究

摘要

The Raman scattering spectra of MBE-grown GaNA s epilayers were investigated. The resonant enhancement of Raman scattering due to the E+ states in the conduction band was observed and the Raman peaks r elated to the phonons at non-Γ points of the Brillouin Zone were detected.It w as clearly seen that the local vibrational mode induced by nitrogen impurities e volves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850℃ rapid thermal an nealing, it was tentatively suggested that two weak peaks were induced by the pa iring or clustering effect of nitrogen.%对分子束外延生长的GaNAs外延层进行了拉曼散射研究 ,观测到了由于导带中的E+态所引起的共振散射和由此产生的布里渊区非Γ点声 子的拉曼峰.清晰地观测到了随氮含量增大,氮在GaAs中的局域模振动演变为GaNAs中的类Ga N晶格声子带模.通过样品在850度快速热退火前后拉曼谱的对比,推测性地指认了两个与氮的 成对或成团效应有关的振动峰.