锌掺杂包覆状氮化镓纳米线的制备及表征

摘要

采用化学气相沉积法在石英衬底上沉积出锌掺杂的GaN纳米线.利用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线能谱仪(EDS)和拉曼光谱(Raman)对锌掺杂GaN纳米线进行了结构和形貌的表征.结果表明:锌掺杂后GaN纳米线的XRD图谱向低角度方向移动,衍射峰更加明显.锌掺杂GaN纳米线存在一层包覆结构,纳米线的直径范围约为300 ～ 500 nm,包覆层的厚度在150 ～ 200 nm.锌掺杂GaN纳米线的Raman光谱在E2(high)和A1(LO)出现了微小的红移.最后对包覆结构的可能形成机理进行了探讨.%Zn-doped GaN nanowires were deposited on quartz substrate by the CVD method.The structure and the morphology of GaN nanowires were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM),Energy Dispersive X-ray spectroscopy(EDS) and Raman spectra(Raman).The results show that XRD patterns of Zn-doped GaN nanowires produce small shift to the the low-angle value and diffraction peaks become more obvious.Zn-doped GaN nanowires were coated with a layer of nano structure.The diameter of the nanowire is about 300-500 nm and the thickness of the layer is about 150-200 nm.In Raman spectra of Zn-doped GaN nanowires,E2 (high)and A1 (LO) model produced a small red shift.The possible growth mechanism of coated Zn-doped GaN nanowires is also discussed.