Field emission arrays (FEAs) were fabricated by magnetron sputtering,photolithography,wet etching technique and electrophoretic deposition. The CNTs cathodes were characterized by the optical microscopy,field emission scanning electron microscopy (FESEM) and Raman spectra. And then,its field emission characteristics based on planar-gate triode with CNTs emitters were also investigated. The optical microscopy and field emission scanning electron microscopy (FESEM) image indicates that the cathode electrodes and gate electrodes were interdigitated and paralleled on the same plane and CNTs emitters were selectively defined on the cathode in this triode structure. Its field emission performance shows that the turn-on voltage of planar-gate triod field e-mission cathode with CNTs emitters was about 155 V and the emission current came to 286μA. The field emission properties were completely modulated by gate voltage. In addition,field emission properties of EPD CNTs and scrren printed CNTs cathode were compared. The results indicate that the EPD CNTs cathode has lower turn-on voltage and higer luminescence uniformity than that of the screen printed CNTs cathode.%利用磁控溅射、光刻、湿法刻蚀和电泳技术在玻璃基片上成功制备平行栅场发射阴极阵列,用光学显微镜、场发射扫描电镜和拉曼光谱观察了碳纳米管的形貌和结构,并测试所制备的平行栅碳纳米管阴极的场发射性能.光学显微镜和场发射电子显微镜测试表明,平行栅结构阴极和栅极交替地分布,同一个平面内,CNTs有选择性地沉积在平行栅结构中的阴极表面.场发射测试表明,平行栅CNTs场发射阴极的开启电压为 155V,发射电流高达268μA,场发射特性完全由栅压控制;此外,其场发射特性与丝网印刷工艺制备的阴极有相似甚至更佳的性能,开启电压更低,发光均匀性更好,具有更好的发射特性.
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