Cu2O薄膜的制备与表征

摘要

Cuprous oxide (Cu2O) films were fabricated by a two-pole electrodeposited method using indiumdoped tin oxide (ITO) covered glass substrate and Cu strip.The influence of some technological factors (pH value,deposition potential) on Cu2O films was studied.The as-synthesized products have been systematically characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM) and X-ray photoelectron spectroscope (XPS).The results indicate that the pH value and the applied potential play important roles in the Cu2O films.The optimum technological conditions are obtained as follows:the pH value is 5.7-5.9 and the applied potential is 1.1-1.3V.What's more,in this paper,we also put emphasize on the forming reasons of morphology of Cu2O.%以透明导电玻璃ITO和铜片为工作电极,用0.1mol/L乙酸铜和0.02mol/L乙酸钠的混合溶液作为电解液,通过两电极电化学沉积方法制备了Cu2O薄膜.讨论了pH值和沉积电位对Cu2O薄膜的影响,利用X射线衍射仪(XRD)、场发射扫描电子显微镜(SEM)、X射线光电子能谱(XPS)对薄膜进行表征.结果表明,两电极电化学沉积法制备Cu2O薄膜最佳的pH值为5.7～5.9,沉积电位为1.1～1.3V.此外,分析了沉积电位对Cu2O薄膜形貌的影响.